Narrowband near-ultraviolet photodetector fabricated from porous GaN/CuZnS heterojunction

Narrowband photodetection systems are widely used in fluorescence detection, artificial vision and other fields. In order to realize the narrow spectral detection of special band, it is traditionally necessary integrate broadband detectors with optical filters. However, development technology, higher requirements have also been placed on power consumption, size, cost system, applications traditional narrowband photodetectors complex structures high costs limited. Thus, a filterless, near-ultraviolet photodetector based porous GaN/CuZnS heterojunction demonstrated. The GaN thin films low defect density CuZnS hole conductivity fabricated by photoelectrochemical etching water bath growth methods, respectively, thus fabricated. Benefiting from structure filtering effect CuZnS, photo-dark current ratio device exceeds four orders magnitudes under –2 V bias 370 nm light illumination; more importantly, has an ultra-narrowband photoresponse full width at half maximum <8 (peak nm). addition, peak responsivity, external quantum efficiency specific detectivity reach 0.41 A/W, 138.6% 9.8×10<sup>12</sup> Jones, respectively. These excellent performances show that heterojunctions broad application prospects field narrow-spectrum ultraviolet photodetection.